JPH0573274B2 - - Google Patents

Info

Publication number
JPH0573274B2
JPH0573274B2 JP62041872A JP4187287A JPH0573274B2 JP H0573274 B2 JPH0573274 B2 JP H0573274B2 JP 62041872 A JP62041872 A JP 62041872A JP 4187287 A JP4187287 A JP 4187287A JP H0573274 B2 JPH0573274 B2 JP H0573274B2
Authority
JP
Japan
Prior art keywords
resistance
resistor
reference voltage
voltage generating
reference resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62041872A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63207165A (ja
Inventor
Hideyuki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62041872A priority Critical patent/JPS63207165A/ja
Publication of JPS63207165A publication Critical patent/JPS63207165A/ja
Publication of JPH0573274B2 publication Critical patent/JPH0573274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP62041872A 1987-02-24 1987-02-24 半導体装置 Granted JPS63207165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62041872A JPS63207165A (ja) 1987-02-24 1987-02-24 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62041872A JPS63207165A (ja) 1987-02-24 1987-02-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS63207165A JPS63207165A (ja) 1988-08-26
JPH0573274B2 true JPH0573274B2 (en]) 1993-10-14

Family

ID=12620353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62041872A Granted JPS63207165A (ja) 1987-02-24 1987-02-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS63207165A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW330334B (en) * 1997-08-23 1998-04-21 Winbond Electronics Corp Static random access memory polysilicon load structure and manufacturing method

Also Published As

Publication number Publication date
JPS63207165A (ja) 1988-08-26

Similar Documents

Publication Publication Date Title
US4804940A (en) Resistor and electron device employing the same
JP3575026B2 (ja) ラダー型抵抗回路並びにそれを用いたデジタル−アナログ変換器及び半導体装置
JP2994429B2 (ja) 非線形アナログ・デジタル変換器
JP2944442B2 (ja) ディジタルアナログ変換器
JP3246541B2 (ja) 半導体装置
JP2628697B2 (ja) 線形集積化抵抗
GB2263831A (en) Integrated circuit high frequency input attenuator circuit
JPH0573274B2 (en])
JP2852940B2 (ja) アナログ・デジタル変換器
JPH11186909A (ja) 電界効果トランジスタを含む電気回路及び該トランジスタの校正方法
JP3028420B2 (ja) 半導体集積装置
JPH0786949A (ja) デジタル・アナログ変換器
JPH0339569B2 (en])
JPH0438602Y2 (en])
JPH05235279A (ja) 半導体集積回路装置
JP3031582B2 (ja) 半導体集積回路
JPS61288521A (ja) 電子装置
JPH0530072B2 (en])
JPH0579183B2 (en])
JPS58171843A (ja) 半導体集積回路装置
JP2663551B2 (ja) 全並列型ad変換器集積回路
JP2604374B2 (ja) アナログ・ディジタル変換器
JP2734029B2 (ja) 直並列形ad変換器
JP2823743B2 (ja) 半導体集積装置
JP2967265B2 (ja) 半導体装置